Liheng Industry (HK) Limited
Products
Products
Liheng Industry (HK) Limited
Transistors for Amplifier Applications and General Purposes, LM317L
  • Transistors for Amplifier Applications and General Purposes, LM317L
Transistors for Amplifier Applications and General Purposes, LM317L

Transistors for Amplifier Applications and General Purposes, LM317L

Get Latest Price
Payment Type:
Telegraphic Transfer (TT, T/T)
Quantity:

Your message must be between 20 to 2000 characters

Contact Now
Basic Info
Basic Info
Payment Type: Telegraphic Transfer (TT,T/T)
Product Description
Product Description
  • Features:
    • Low collector-emitter saturation voltage
    • VCE (sat) = 1.0V (maximum) at IC=-3A, IB=-0.3A
    • DC current gain
    • hFE =60-200 at IC=0.5A
    • Complementary to NPN 2SD880
    • Maximum ratings (TA=25C unless otherwise noted)
    • Symbol parameter value units
    • VCBO collector: base voltage: 60V
    • VCEO collector: emitter voltage: 60V
    • VEBO emitter: base voltage: 7V
    • IC collector current: continuous: 3A
    • PC collector power dissipation: 1.5 W
    • TJ junction temperature: 150°C
    • Tstg storage temperature: -55 to 150°C
  • Electrical characteristics (Tamb= 25C unless otherwisespecified):
    • Parameter symbol test conditions: minimum typical maximumunit
    • Collector-base breakdown voltage: V (BR) CBO IC=-1mA, IE=0 -60V
    • Collector-emitter breakdown voltage: V (BR) CEO IC =-50mA, IB=0-60 V
    • Emitter-base breakdown voltage: V (BR) EBO IE=-1mA, IC=0 -7V
    • Collector cut-off current: ICBO VCB=-60V, IE=0 -100¼A
    • Emitter cut-off current: IEBO VEB=-7V, IC=0 -100 ¼A
    • hFE (1) x VCE=-5V, IC=-500mA 60 200
    • DC current gain
    • hFE(2) x VCE= -5V, IC= -3A 20
    • Collector-emitter saturation voltage VCE (sat) x IC=-3A,IB=-0.3A -1 V
    • Base-emitter voltage VBE x VCE=-5V, IC=-500mA -1 V
    • Transition frequency fT VCE=-5V, IC=-500mA, f=1MHz 9 MHz
    • Turn-on time ton 0.4¼s
    • Storage time tstg 1.7¼s
    • Turn-off time toff
    • VCC= -30V, Ic= -2A,
    • IB! =IB2= -0.2A
    • 0.5¼s
    • Pulse test
    • classification of hFE(1)
    • Rank: OY
    • Range: 60 to 120, 100 to 200
  • Low collector-emitter saturation voltage
  • VCE (sat) = 1.0V (maximum) at IC=-3A, IB=-0.3A
  • DC current gain
  • hFE =60-200 at IC=0.5A
  • Complementary to NPN 2SD880
  • Maximum ratings (TA=25C unless otherwise noted)
  • Symbol parameter value units
  • VCBO collector: base voltage: 60V
  • VCEO collector: emitter voltage: 60V
  • VEBO emitter: base voltage: 7V
  • IC collector current: continuous: 3A
  • PC collector power dissipation: 1.5 W
  • TJ junction temperature: 150°C
  • Tstg storage temperature: -55 to 150°C
  • Parameter symbol test conditions: minimum typical maximumunit
  • Collector-base breakdown voltage: V (BR) CBO IC=-1mA, IE=0 -60V
  • Collector-emitter breakdown voltage: V (BR) CEO IC =-50mA, IB=0-60 V
  • Emitter-base breakdown voltage: V (BR) EBO IE=-1mA, IC=0 -7V
  • Collector cut-off current: ICBO VCB=-60V, IE=0 -100¼A
  • Emitter cut-off current: IEBO VEB=-7V, IC=0 -100 ¼A
  • hFE (1) x VCE=-5V, IC=-500mA 60 200
  • DC current gain
  • hFE(2) x VCE= -5V, IC= -3A 20
  • Collector-emitter saturation voltage VCE (sat) x IC=-3A,IB=-0.3A -1 V
  • Base-emitter voltage VBE x VCE=-5V, IC=-500mA -1 V
  • Transition frequency fT VCE=-5V, IC=-500mA, f=1MHz 9 MHz
  • Turn-on time ton 0.4¼s
  • Storage time tstg 1.7¼s
  • Turn-off time toff
  • VCC= -30V, Ic= -2A,
  • IB! =IB2= -0.2A
  • 0.5¼s
  • Pulse test
  • classification of hFE(1)
  • Rank: OY
  • Range: 60 to 120, 100 to 200

    • Send your message to this supplier

    • Mr.  Lee

    • Enter between 20 to 4,000 characters.

    Related Products

    Related Keywords

    Related Keywords
    Related Products
    Product Categories