(original) HEXFET Power MOSFET IRFL024ZTRPBF

Specifications (original)HEXFET Power MOSFET IRFL024ZTRPBF

Manufacturer: IR

Date Code: 2012+

Package: SOT223

Note: New and Original 192221p

Description Advanced Process Technology Ultra Low On-Resistance 150°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free   (original)HEXFET Power MOSFET IRFL024Z Part No:IRFL024ZTRPBF
Manufacturer: IR
Date Code: 1147+
Package: SOT223
Note: New and Original 192221pcs in stock       Shenzhen Chuangxinda Electronics Co
Add: R1811, Jiahe Tower, Shennan Mid Rd, Shenzhen, China 518031
(P): 86-755 83013088   (F)86 755 83957975
Skype: cxda01   QQ:  2355813658 www.cxda.com         

Datasheets	IRFL024ZPbF
Product Photos	SOT223-3L
Product Training Modules	High Voltage Integrated Circuits (HVIC Gate Drivers)
Design Resources	IRFL024Z Saber Model IRFL024Z Spice Model
PCN Design/Specification	SOT-223 FET Wire 04/Jul/2013 SOT-223 Cu Wire 08/Oct/2013
PCN Assembly/Origin	Backend Wafer Transfer 23/Oct/2013
Standard Package	2,500
Category	Discrete Semiconductor Products
Family	FETs - Single
Series	HEXFET®
Packaging	Tape & Reel (TR)
FET Type	MOSFET N-Channel, Metal Oxide
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	55V
Current - Continuous Drain (Id) @ 25°C	5.1A (Ta)
Rds On (Max) @ Id, Vgs	57.5 mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) @ Vgs	14nC @ 10V
Input Capacitance (Ciss) @ Vds	340pF @ 25V
Power - Max	1W
Mounting Type	Surface Mount
Package / Case	TO-261-4, TO-261AA
Supplier Device Package	SOT-223
Dynamic Catalog	N-Channel Logic Level Gate FETs
Other Names	IRFL024ZTRPBF-ND IRFL024ZTRPBFTR