
1w 730nm infared high power diode
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Basic Info
Place of Origin: | Guangdong, China (Mainland) |
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Product Description
Product Description
1w 730nm infared high power diode Applications 1.Plant grow light 2.Medical equipment 3. specail Light sources 4, visual light source Package size:
Absolute Maximum Rating (Ta=25°C)
Plus with Max 10ms,duty ratio max1/10 n Initial Electrical/Optical Characteristics (Ta=25°C)

Item | Symbol | Value | Unit |
DC forward current | IF | 350 | mA |
Pulse forward current | IFP | 500 | mA |
Power dissipation | PD | 700 | mW |
Operating temperature | Topr | -20~+75 | °C |
Storage temperature | Ystg | -30~+80 | °C |
Reverse voltage | VR | 5 | V |
Sold soldering temperature | Tsol | 260°C/3Sec | --- |
Item | Symbol | condition | Min | Type | Max | Unit |
DC forward Voltage | VF | I=350mA | 1.7 | 1.8 | 2.1 | V |
DC reverse Current | IR | V=5V | ---- | ---- | 10 | μA |
Chromaticity coordinates* | λ | I=350mA | 720 | 730 | 740 | nm |
Spectrum Radiation Bandwidth | Δλ | I=350mA | ---- | 28 | ---- | Nm |
Luminous Intensity | IV | I=350mA | 15 | 22 | mW | |
50%Power Angle | 2θ1/2 | I=350mA | ---- | 120 | ---- | deg |

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