1w high power 1030nm infrared led diode

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Basic Info

Place of Origin:	Guangdong, China (Mainland)

Product Description

1w high power 1020nm infrared led diode Absolute Maximum Rating (Ta=25°C)

Item	Symbol	Value	Unit
DC forward current	I_F	350	mA
Pulse forward current	I_FP	1000	mA
Power dissipation	P_D	700	mW
Operating temperature	T_opr	-20~+75	°C
Storage temperature	Y_stg	-30~+80	°C
Reverse voltage	V_R	5	V
Sold soldering temperature	T_sol	260°C/3Sec(*1)	---

(*1)SMT solder ability only for Silicone materials len, if PC len Manual welding get better (*2)Plus with Max 10ms,duty ratio max1/10 n Initial Electrical/Optical Characteristics (Ta=25°C)

Item	Symbol	condition	Min	Type	Max	Unit
DC forward Voltage	V_F	I=350mA		1.28	1.45	V
DC reverse Current	I_R	V=5V	----	----	10	μA
Peak wavelength	λ	I=350mA	1020	1030	1050	nm
Spectrum Radiation Bandwidth	Δλ	I=350mA	----	40	----	Nm
Radiant power2	Φe	I=350mA		40		mw
Radiant power2	Φe	I=700mA		80		mw
50%Power Angle	2θ1/2	I=350mA	----	120	----	deg
Switching time	tr, tf	I=350mA		20/20		ns