850nm IR LED Emitter Receiver Pair Small Size

850nm IR LED Emitter Receiver Pair Small Size

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Payment Type:: T/T, Paypal, Western Union

Incoterm:: FOB, EXW, FCA

Min. Order:: 5000 Piece/Pieces

Min. Order:: 5000 Piece/Pieces

Delivery Time:: 5-7 Business Days

Transportation:: Ocean, Land, Air

Port:: SHENZHEN

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Basic Info

Place of Origin:	China
Productivity:	1000000000 pcs/week
Supply Ability:	7000000000 pcs/week
Payment Type:	T/T,Paypal,Western Union
Incoterm:	FOB,EXW,FCA
Certificate:	GB/T19001-2008/ISO9001:2008
HS Code:	8541401000
Transportation:	Ocean,Land,Air
Port:	SHENZHEN

Product Description

- IR Receiver -

1206PT850D &1206IRC-85L

There have two kinds of LED in above, the white one is the 850nm infrared LED emitter and the black one is the IR receiver of 850nm LED top view type that can also named as 850nm photo diode. In the circuit, 850nm LED emitter emits the signal and then the IR receiver will receive it. Typically, the IR receiver will be packaged as black lens in order to filter our some extra light, which can make sure it just can got the signal that we need. For IR receiver, there also have other shape for choose, such as 3mm round top, 5mm round top, 3528 SMD LED type ect.

1206 smd led

- Size: 2.0*1.25*0.8mm

- Chip Number: 1 chip

- Color: 850nm LED

- Type: Surface mount device

- Chip brand: Epistar

- Polarity Mark

- Different color are available

- Different wavelength are available

- Warranty: 5 Years

- RoHS, REACH, EN62471

- Uniform light output

- Long life-solid state reliability

- Low Power consumption

-Anti UV epoxy resin package

-High temperature resistance

-Dimension Parameters -

1206 smd ir 850nm size

1206 smd 850nm receiver size

These SMD LED case are also available for IR LED, UV LED, Blue SMD LED, Red SMD LED, Amber LED ect.

- Emitting Color -

850nm IR LED 1206SMD

*Colors in the photo was took by camera, please take actual emitting color as standard.

- Electrical Parameters -

Absolute Maximum Ratings At Ta=25℃

Parameter	Symbol	Rating
Power Dissipation	Pd	50mW
Pulse Forward Current	IFP	100mA
Forward Current	IF	30mA
Reverse Voltage	VR	5V
Junction Temperature	Tj	115°C
Operating Tempertature	Topr	-40 - +80°C
Storage Tempertature	Tstg	-40 - +100°C
Soldering Temperature	Tsol	260°C
Electro-Static-Discharge(HBM)	ESD	2000v
Warranty	Time	2Years
Antistatic bag	Piece	3000Back
*Pulse Forward Current Condition:Duty 1% and Pulse Width=10us.
*Soldering Condition:Soldering condition must be completed with 3 seconds at 260°C

Optical and Electrical Characteristics( Tc=25℃)

Parameter

Symbol

Min

Typ

Max

Unit

Test Condition

Forward Voltage

VF

1.3

1.6

V

IF=30mA

Pulse Forward Voltage

VF

2.0

V

IFP=100mA

Radiant Intensity

IE

2.3

4.8

mw/sr

IF=30mA

Peak Wavelength

λP

845

850

858

nm

IF=30mA

Total Radiated Power

PO

3.2

mw

IF=30mA

Half Width

Dl

50

nm

IF=30mA

Viewing Half Angle

2q1/2

±70

deg

IF=30mA

Reverse Current

IR

5

uA

VR=5V

Rise Time

Tr

25

ns

IF=30mA

Fall Time

Tf

13

ns

IF=30mA

*Luminous Intensity is measured by ZWL600.

*q1/2 is the off-axis angle at which the luminous intensity is half the axial luminous intensity.

*lD is derived from the CIE chromaticity diagram and represents the single wavelength which defines the color of the device.

1206 smd Receiver

Parameter

Symbol

Min

Typ

Max

Unit

Test Condition

Collector-Emitter Voltage
VCEO

30 V

Emitter-Collector Voltage
VECO

5 V

Collector Dark Current

ICEO

30

nA

VCE=20V

Ee=0mw/cm2

Collector Dark Current
ICEO

150 uA
VCE=70V

Ee=0mw/cm2

On State Collector Current

IC(on)

0.7
4

mA

Ee=1mw/cm2

Vce=5v

Collector-Emitter

Breakdown Voltage

Bvceo

85

V

ICBO=100uA

Ee=0mw/cm2

Emitter-Collector

Breakdown Voltage

Bvceo

8.2

V

IECO=10uA

Collector-Emitter

Saturation Voltage

VCE(sat)

0.3

V

IC=2mA

IB=100uA

Ee=1mw/cm2

Photocurrent 1

IPCE
300

400

uA

Vce=5V

Ee=1mw/cm2

λP=850nm

Photocurrent 2
IPCE 500
600 uA
VCE=5V

Ee=1mw/cm2

λP=940nm

Current gain

hFE
200

3000

uA

VCE=5V

IC=2mA

Wavelenghth of Peak Sensitivity
λP

850

nm

Range of Spectral Bandwidth

λ0.5

700

1100

nm

Response Time-Rise Time

tR

15

us

Vce=5v

Ic=1mA

RL=1000Ω

Response Time-Fall Time
tF
15
us

Half Sensitivity angle
△λ

±10

deg

Collector-base Capacitance
CCB

8 PF F=1MHz,VCB=3V

- Golden Wire Connection -

* In order to keep every one of LED's long lifespan, BestLED factory use high pure gold wire for inside circuit connection

- Packing -

*We package it with vacuum packing after tape it as a reel

- Application -

- Related LED -

- Production -

- Use -

SMD LED Use of attention

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Related Keywords

850nm IR LED Emitter Receiver , 850nm IR LED Pair , 850nm Infrared Photodiode

Parameter	Symbol	Min	Typ	Max	Unit	Test Condition
Forward Voltage	VF	1.3		1.6	V	IF=30mA
Pulse Forward Voltage	VF		2.0		V	IFP=100mA
Radiant Intensity	IE	2.3		4.8	mw/sr	IF=30mA
Peak Wavelength	λP	845	850	858	nm	IF=30mA
Total Radiated Power	PO		3.2		mw	IF=30mA
Half Width	Dl		50		nm	IF=30mA
Viewing Half Angle	2q1/2		±70		deg	IF=30mA
Reverse Current	IR			5	uA	VR=5V
Rise Time	Tr		25		ns	IF=30mA
Fall Time	Tf		13		ns	IF=30mA
*Luminous Intensity is measured by ZWL600.
*q1/2 is the off-axis angle at which the luminous intensity is half the axial luminous intensity.
*lD is derived from the CIE chromaticity diagram and represents the single wavelength which defines the color of the device.